Matthew Hartensveld

Research and Development of GaN micro-LED Technology

Hello! I’m Matt an engineer pursuing advances in LEDs and FET technology.
Starting by making transistors in a garage in high school, I find new solutions with limited resources.
From making 30nm gate length transistors in a lab who's record was 500nm, to interchanable tool mods, to developing completely new deives I strive to find new solutions to problems.

download cv

Select publications:

Monolithic Integration of GaN Nanowire Light-Emitting Diode with Field Effect Transistor

450 nm Gallium Nitride Alternating Current Light-Emitting Diode

Education.

  • 2018-2021

    PhD Microsystems Engineering, RIT

    Reseach on advanced nanostructured III-Nitride LEDs for Display Applications.

  • 2016-2018

    MS Material Science and Engineering, RIT

    Research on GaN nanowire formation through dry and wet etches.

  • 2013-2018

    BS Microelectronic Engineering, RIT

    Senior project involved independant project which sucessfully fabricated a 30nm GaN nanowire FET.

Research.

GaN LEDs with Tansistors

Work involves the integration standard GaN LEDs with transistors for use in display applications. The underlying layers below the LED are modified in order to support device opperation.

Work involves the integration standard GaN LEDs with transistors for use in display applications. The underlying layers below the LED are modified in order to support device opperation.

SID Display Week 2021

Wet Etching of GaN

Novel studies regarding vertical nanowire formation with damage removal, porous GaN etching, and tapered nanowires.

Damage recovery aspects investigated with the formation of vertical GaN nanowires through hydroxyl based chemistry. Proposed and advised master's student projects on porous GaN etching and sub 100nm GaN nanowire formation. Discovered and characterized tapered undercut in hydroxyl chemistry for GaN deep ultra violet LEDs.

GaN NW Formation and Recovery Paper Master's Student Thesis on Porous GaN Etching and Sub 100nm Wires GaN DUV Nanowire Undercut Paper

Nanosphere Lithography

To prototype nanoscale features a nanosphere lithography approah has been developed to create these structures.

To prototype nanoscale features a nanosphere lithography approah has been developed to create these structures.

Master's Thesis

GaN Nanowire Devices

GaN vertical nanowire devices have each been independetly proposed and subsequently fabricated. These devices include FETs, LEDs, NVM, and the integration of each.

Having freedom to pursue ideas I had developed numerous new device scemes, fabricating them and also directing the fabrication with master's students.

GaN Nanowire FET with 30nm Gate Length GaN Nanowire LED-FET with 40nm Gate Length GaN Nanowire LED-FET with Non-Violitile Memory, Master's Student Thesis

Work on GaN Devices

Fabrication

Developed GaN processes in Silicon Foundry, and novel designs for flexible and nanowire devices.

Leader in RIT's cleanroom, developed GaN specific processes, certified and regularly opperate all availble tools in process flow. Development of recipes for GaN and unique process steps independetly done.

Master's Thesis PhD Disseration (embargo for patents until 2022, can request sections)

Publications.

Monolithic Integration of GaN Nanowire Light-Emitting Diode with Field Effect Transistor

IEEE EDL, 2019

Gallium Nitride (GaN) based light-emitting diodes (LEDs) are being investigated for the next generation display technology. The peristent issue, however, has been the lack of ability to integrate transistors with LEDs for control. Here, a novel vertical integration scheme is utilized to fabricate LEDs with nanowire field effect transistors (FETs) for the first tiem. This approach utilizes the unintentionally doped GaN template layer which is common to LED growth for the fabrication of nanowire FETs. The demonstrated voltage-controlled light-emitting unit provides area savings, scaling, and easier fabrication due to the vertical integration. For these initial annaowire devices, light modulation is demonstrated with LED turn "off" at -10 V. Due to the nanowire approach, these devices show over 2x improvement in the Ion to Ioff ratio compared to alternative integration schemes.

Read the article

Ultraviolet Electrostatic Field Effect Light-Emitting Diode

IEEE PJ, 2020

UV AlGaN LEDs are being explored as a better solution over mercury bulbs for UV disinfectant and beyond. Unlike visible LEDs, UV LEDs suffer from poor efficiency stemming from poor p-type doping, leading to an imbalance of holes to electrons. In this work this problem is addressed through better hole utilization and increase ionization.

Read the article

AlGaN nanowires with inverse taper for flexible DUV emitters

JPhys Photonics, 2021

Deep ultraviolet (DUV) AlGaN light-emitting diodes (LEDs) are promising alternatives for production of DUV light, offering many advantages over mercury arc lamps. In this work, AlGaN nanowires with an inverse taper profile were demonstrated through a wet etching process, enabling removal of the nanowires from the growth substrate in a novel peeling process to form flexible devices. AlGaN nanowires with taper angles of 22◦ were obtained following a 70 min etch in AZ400K. Nanowire taper angle was studied as a function of etch time and nanowire top diameter. Nanowires with inverse taper were then embedded in a flexible polymer layer and removed from their growth substrate, which could enable development of high-efficiency flexible micro-LEDs.

Read the article

Contact.

matthart610@yahoo.com
  • Hartensveld Consulting, LLC
  • 1335 Jefferson Road #92525
  • Rochester, NY 14692