Monolithic Integration of GaN Nanowire Light-Emitting Diode with Field Effect Transistor
IEEE EDL, 2019
Gallium Nitride (GaN) based light-emitting diodes (LEDs) are being investigated for the next generation display technology. The peristent issue, however, has been the lack of ability to integrate transistors with LEDs for control. Here, a novel vertical integration scheme is utilized to fabricate LEDs with nanowire field effect transistors (FETs) for the first tiem. This approach utilizes the unintentionally doped GaN template layer which is common to LED growth for the fabrication of nanowire FETs. The demonstrated voltage-controlled light-emitting unit provides area savings, scaling, and easier fabrication due to the vertical integration. For these initial annaowire devices, light modulation is demonstrated with LED turn "off" at -10 V. Due to the nanowire approach, these devices show over 2x improvement in the Ion to Ioff ratio compared to alternative integration schemes.