Semiconductor engineer working across device physics, fabrication, and characterization - with a focus on III-nitride micro-LEDs, transistors, and gate-all-around nanosheet HEMTs.
Dissertation: Advanced Nanostructured III-Nitride LEDs for Display Applications
Thesis: Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires
Capstone: Design of a 30 nm gate length vertical GaN nanowire transistor
Color-tunable micro-LEDs using V-grooves to alter indium content during growth, enabling emission from 425 to 640 nm. Semi-polar crystal planes and strain relaxation produce varying indium concentrations, demonstrated across μLEDs from 2 to 500 μm.
Vertical integration of GaN LEDs with nanowire FETs on a common GaN template, enabling area savings, simpler fabrication, improved light modulation, and a significant Ion/Ioff enhancement over other integration schemes.
Flexible deep-ultraviolet AlGaN LEDs created via wet etching of inverse-taper nanowires; embedding in polymer allows removal from the growth substrate, opening a path to high-efficiency flexible micro-LEDs.
18+ peer-reviewed publications in total — full list on Google Scholar →
12+ U.S. patents granted and pending across micro-LED, monolithic integration, and III-nitride transistor technology. Selected:
Full portfolio available on request.