About Me
Matthew Hartensveld received the B.S. degree in microelectronic engineering, the M.S. degree in materials science and engineering, and the Ph.D. degree in microsystems engineering from the Rochester Institute of Technology, in 2018 and 2021, respectively. He is a highly skilled and accomplished semiconductor engineer with expertise in GaN micro-LEDs and transistors. He has a strong background in research and development. He is currently the CTO with Innovation Semiconductor Inc., where he has pioneered the creation of monolithic gallium nitride LED-FETs and innovated color-tunable indium gallium nitride LEDs. He has published 18 scientific articles and pioneering the invention of various semiconductor devices.
Key Skills
Transistor Developments
Throughout my academic and professional journey, I've extensively worked on semiconductor devices, notably designing monolithic GaN architectures along side novel devices.
Micro-LED Work
I specialized in the development and optimization of GaN micro-LEDs, contributing to advancements in terms of resolution, efficiency, and novel color-tunability.
Business Acumen
As the CTO and Co-Founder of Innovation Semiconductor, I've led technical initiatives, managed external contract engineers, and collaborated cross-functionally to drive the company's vision and breakthroughs in the semiconductor space.
Semiconductor Home Lab
In my personal endeavors, I've passionately pursued home-brew semiconductor fabrication, showcasing hands-on expertise and innovative experimentation outside of traditional professional settings.